Active Gate Drivers have gained of interest as they allow one to shape the switching waveforms finely, thus reducing overshoots and oscillations. However, when fast power switches are exploited, the tuning of such drivers is still challenging. This paper investigates the adjustment of gate current profile under load variations, which is a crucial issue when targeting practical applications. Indeed, a technique, based on the stretching of time intervals, is proposed and its effectiveness, in terms of undershoot reduction, is experimentally assessed
The extended use of Gallium Nitride (GaN) transistors in power applications, such as automotive, ind...
The trend in power electronic applications is to reach higher power density and higher efficiency. C...
Insulated gate bipolar transistor (IGBT) power semiconductors are widely employed in industrial appl...
the Power Electronics Innovation Center (PEIC), Politecnico di Torino,ItalyActive Gate Drivers have ...
Active gate drivers lend themselves well to reducing over- and under- voltages during the commutatio...
The reduction of overshoots/undershoots and oscillations affecting the switching waveforms in hard-s...
Active Gate Drives (AGDs) tailor the signal applied to the gates of power metal-oxide-semiconductor ...
Active gate driving has been demonstrated to beneficially shape switching waveforms in Si-and SiC-ba...
Active gate drivers have been investigated in power circuits to reduce unwanted over-voltages and ov...
In the present time, electrical power conversion is performed more and more widely using fully-contr...
The switching waveform design, especially controlling and optimizing the slew rate, is an efficient ...
International audienceThis paper presents the study on gate driver circuitries implemented to drive ...
Electrification is spreading constantly, even in areas usually led by other forms of energy. One of ...
This paper investigates the influence of current-source and voltage-source gate driver on the switch...
Today’s power converter designs, especially in the automotive or the all-electrical aircraft industr...
The extended use of Gallium Nitride (GaN) transistors in power applications, such as automotive, ind...
The trend in power electronic applications is to reach higher power density and higher efficiency. C...
Insulated gate bipolar transistor (IGBT) power semiconductors are widely employed in industrial appl...
the Power Electronics Innovation Center (PEIC), Politecnico di Torino,ItalyActive Gate Drivers have ...
Active gate drivers lend themselves well to reducing over- and under- voltages during the commutatio...
The reduction of overshoots/undershoots and oscillations affecting the switching waveforms in hard-s...
Active Gate Drives (AGDs) tailor the signal applied to the gates of power metal-oxide-semiconductor ...
Active gate driving has been demonstrated to beneficially shape switching waveforms in Si-and SiC-ba...
Active gate drivers have been investigated in power circuits to reduce unwanted over-voltages and ov...
In the present time, electrical power conversion is performed more and more widely using fully-contr...
The switching waveform design, especially controlling and optimizing the slew rate, is an efficient ...
International audienceThis paper presents the study on gate driver circuitries implemented to drive ...
Electrification is spreading constantly, even in areas usually led by other forms of energy. One of ...
This paper investigates the influence of current-source and voltage-source gate driver on the switch...
Today’s power converter designs, especially in the automotive or the all-electrical aircraft industr...
The extended use of Gallium Nitride (GaN) transistors in power applications, such as automotive, ind...
The trend in power electronic applications is to reach higher power density and higher efficiency. C...
Insulated gate bipolar transistor (IGBT) power semiconductors are widely employed in industrial appl...