Ge15Sb85 is a promising material for phase-change memory applications owing to its very short crystallization times. As deposited amorphous samples of sputter deposited Ge15Sb85 have been investigated by extended x-ray absorption fine structure (EXAFS) measurements on both, Sb and Ge K absorption edges. After crystallizing the specimen, x-ray diffraction (XRD) and EXAFS measurements have been performed to analyze the atomic structure at different annealing conditions. Thus, experimental techniques focusing on the long range order as well as on the local order have been combined. Sb atoms have on average 3.2(2) nearest neighbors, while Ge atoms have 4.0(3). The Ge-Ge and Ge-Sb bond lengths are determined to 2.46(2) and 2.66(1) angstrom respe...
International audienceA Calvet-type differential scanning calorimeter has been implemented on a sync...
The rapidly increasing net amount of digital information requires higher data- storage capacities an...
Insights into the local atomic arrangements of layered Ge-Sb-Te compounds are of particular importan...
Phase-change materials belong to a group of materials, that are suitable for optical and electronic ...
The as-deposited (AD) amorphous structure of the prototype phase change material Ge2Sb2Te5 (GST-225)...
Laser-induced crystalline-amorphous phase change of Ge-Sb-Te alloys is the key mechanism enabling th...
Phase change materials involve the rapid and reversible transition between nanoscale amorphous (a-) ...
Phase-change optical memories are based on the astonishingly rapid nanosecond-scale crystallization ...
High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant...
We present chemical state information on contamination-free Ge2Sb2Te5 thin film using high-resolutio...
International audienceGe-rich and N-doped Ge-Sb-Te thin films and patterned structures for memory ap...
Extended X-ray absorption fine structure (EXAFS) has been developed to a useful tool for determining...
International audienceThe material engineering of GeSbTe alloys has led to the significant improveme...
International audienceGe-rich Ge–Sb–Te alloys are materials with potential for new non-volatile memo...
International audienceAmong the phase change materials, Ge-rich GeSbTe (GST) alloys are of considera...
International audienceA Calvet-type differential scanning calorimeter has been implemented on a sync...
The rapidly increasing net amount of digital information requires higher data- storage capacities an...
Insights into the local atomic arrangements of layered Ge-Sb-Te compounds are of particular importan...
Phase-change materials belong to a group of materials, that are suitable for optical and electronic ...
The as-deposited (AD) amorphous structure of the prototype phase change material Ge2Sb2Te5 (GST-225)...
Laser-induced crystalline-amorphous phase change of Ge-Sb-Te alloys is the key mechanism enabling th...
Phase change materials involve the rapid and reversible transition between nanoscale amorphous (a-) ...
Phase-change optical memories are based on the astonishingly rapid nanosecond-scale crystallization ...
High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant...
We present chemical state information on contamination-free Ge2Sb2Te5 thin film using high-resolutio...
International audienceGe-rich and N-doped Ge-Sb-Te thin films and patterned structures for memory ap...
Extended X-ray absorption fine structure (EXAFS) has been developed to a useful tool for determining...
International audienceThe material engineering of GeSbTe alloys has led to the significant improveme...
International audienceGe-rich Ge–Sb–Te alloys are materials with potential for new non-volatile memo...
International audienceAmong the phase change materials, Ge-rich GeSbTe (GST) alloys are of considera...
International audienceA Calvet-type differential scanning calorimeter has been implemented on a sync...
The rapidly increasing net amount of digital information requires higher data- storage capacities an...
Insights into the local atomic arrangements of layered Ge-Sb-Te compounds are of particular importan...