Add to ORKGInternational audienceDirect bonding is a well-known process. However in order to use this process in spatial instrument fabrication the mechanical resistance needs to be quantified. In order to improve bonded strength, optimal parameters of the process are found by studying the influence of annealing time, temperature and roughness which are studied using three experimental methods: double shear, cleavage and wedge tests. Those parameters are chosen thanks to the appearance of time/temperature equivalence. Results brought out a predictive model of the bonding energy
Wafer bonding is a process by which two or more mirror-polished flat surfaces are joined together. T...
Historically, silicon contact bonding has been used for silicon-on-insulator fabrication. However, t...
A bonding intensity testing method, called Press-arm model, has been successfully designed and verif...
International audienceDirect bonding is a well-known process. However in order to use this process i...
Direct bonding is a well-known process. However in order to use this process in spatial instrument f...
International audienceDirect bonding is of particular interest for optical system manufacturing for ...
International audienceDirect bonding is of particular interest for optical system manufacturing for ...
International audienceDirect bonding is of particular interest for optical system manufacturing for ...
International audienceSilicon direct bonding is a well known process in optic. In this communication...
The procedure of low temperature silicon direct bonding (LTSDB) was investigated by bonding surface ...
Using an original and dynamic crack-opening method the distribution of surface energy values is anal...
Abstract Molecular or direct bonding is an emerging technique to assemble directly two silicon wafer...
This paper presents the results of surface energy y measurements performed in situ during annealing ...
International audienceDirect bonding is of particular interest for optical system manufacturing for ...
A bonding intensity testing method, called Press-arm model, has been successfully designed and verif...
Wafer bonding is a process by which two or more mirror-polished flat surfaces are joined together. T...
Historically, silicon contact bonding has been used for silicon-on-insulator fabrication. However, t...
A bonding intensity testing method, called Press-arm model, has been successfully designed and verif...
International audienceDirect bonding is a well-known process. However in order to use this process i...
Direct bonding is a well-known process. However in order to use this process in spatial instrument f...
International audienceDirect bonding is of particular interest for optical system manufacturing for ...
International audienceDirect bonding is of particular interest for optical system manufacturing for ...
International audienceDirect bonding is of particular interest for optical system manufacturing for ...
International audienceSilicon direct bonding is a well known process in optic. In this communication...
The procedure of low temperature silicon direct bonding (LTSDB) was investigated by bonding surface ...
Using an original and dynamic crack-opening method the distribution of surface energy values is anal...
Abstract Molecular or direct bonding is an emerging technique to assemble directly two silicon wafer...
This paper presents the results of surface energy y measurements performed in situ during annealing ...
International audienceDirect bonding is of particular interest for optical system manufacturing for ...
A bonding intensity testing method, called Press-arm model, has been successfully designed and verif...
Wafer bonding is a process by which two or more mirror-polished flat surfaces are joined together. T...
Historically, silicon contact bonding has been used for silicon-on-insulator fabrication. However, t...
A bonding intensity testing method, called Press-arm model, has been successfully designed and verif...