Microstructural properties of ZnO :Sn thin films deposited by intermittent spry pyrolysis process

Zinc oxide films have been prepared via spray pyrolysis using a perfume atomizer. ZnCl2 has been used as precursor. The influence of the precursor solution and dopant concentration has been investigated. Homogeneous films are obtained with a precursor concentration ranging between 0.3 and 0.4 M and a SnCl2 dopant concentration of 1–2%. The films exhibit broad band gaps and small conductivity. The microstructural properties of these films have been compared with that of films deposited using a classical nozzle. Films deposited by perfume atomizer are rougher, with smaller grain size, compared to films deposited with a classical nozzle