Physical investigations on (In2S3)x(In2O3)y and In2S3-xSex thin films processed through In2S3 annealing in air and selenide atmosphere

In2S3-xSex and (In2S3)x(In2O3)y thin films have been prepared on glass substrates using appropriate heat treatments of In evaporatedt hin films. X-ray analysis shows that In thin films which were annealed under sulfur atmosphere at 350°C were mainly formed by In2S3. A heat treatment o fthis binary in air at 400°C during one hour leads to (In2S3)x(In2O3)y ternary material which has a tetragonal structure with a preferred orientation of the crystallites along the (109) direction. Similarly, a heat treatment of In2S3 in selenium atmosphere at 350°C during six hours leads to a new In2S3-xSex ternary material having tetragonal body centered structure with a preferred orientation of the crystallites along the (109) direction.Optical band gap,refractive index and extinction coefficient values of In2S3-xSex and (In2S3)x(In2O3)y thin films have been reached. Moreover, correlations between optical conductivity, XRD, AFM and Urbach energy of such ternary thin films have been discussed. Finally, the recorded formation disparity between the quaternary (In2S3)x(In2O3)y and ternary In2S3-xSex compounds has been discussed in terms of the Simha–Somcynsky and Lattice Compatibility theories