Add to ORKG[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0040-6090&DestApp=JCR&RQ=IF_CAT_BOXPLO
The optical and structural properties of InN layers grown by ‘High Pressure Chemical Vapor Depositio...
InN thin films are grown on GaN/sapphire substrates with varying the nitrogen plasma power in plasma...
We study the Raman scattering of n-type InN films grown by molecular beam epitaxy on ZnO substrates....
A series of InN thin films was grown on sapphire substrates via plasma-assisted molecular beam epita...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
We present an extensive study on the structural, electrical and optical properties of InN thin films...
International audienceAn investigation of InN layers grown on GaN templates by molecular beam epitax...
Rutherford backscattering and channeling spectrometry (RBS/C) are used to identify the crystalline q...
Dislocation information and strain-related tetragonal distortion as well as crystalline qualities of...
We report the growth of a-plane InN on an r-plane sapphire substrate by plasma-assisted molecular-be...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
Indium nitride (InN) films were grown on sapphire substrates by radio-frequency plasma-excited molec...
We study the effect of different deposition conditions on the properties of In-polar InN grown by pl...
The vibrational properties of InN samples grown by molecular beam epitaxy (MBE) technique have been ...
The optical and structural properties of InN layers grown by ‘High Pressure Chemical Vapor Depositio...
InN thin films are grown on GaN/sapphire substrates with varying the nitrogen plasma power in plasma...
We study the Raman scattering of n-type InN films grown by molecular beam epitaxy on ZnO substrates....
A series of InN thin films was grown on sapphire substrates via plasma-assisted molecular beam epita...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
We present an extensive study on the structural, electrical and optical properties of InN thin films...
International audienceAn investigation of InN layers grown on GaN templates by molecular beam epitax...
Rutherford backscattering and channeling spectrometry (RBS/C) are used to identify the crystalline q...
Dislocation information and strain-related tetragonal distortion as well as crystalline qualities of...
We report the growth of a-plane InN on an r-plane sapphire substrate by plasma-assisted molecular-be...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
Indium nitride (InN) films were grown on sapphire substrates by radio-frequency plasma-excited molec...
We study the effect of different deposition conditions on the properties of In-polar InN grown by pl...
The vibrational properties of InN samples grown by molecular beam epitaxy (MBE) technique have been ...
The optical and structural properties of InN layers grown by ‘High Pressure Chemical Vapor Depositio...
InN thin films are grown on GaN/sapphire substrates with varying the nitrogen plasma power in plasma...
We study the Raman scattering of n-type InN films grown by molecular beam epitaxy on ZnO substrates....