Add to ORKG[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0003-6951&DestApp=JCR&RQ=IF_CAT_BOXPLO
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
In this Letter, we demonstrate that with the merit of nanowire structure and a self-catalytic growth...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
Nanodevices using individual indium nitride nanowires are fabricated by e-beam lithography. The nano...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
InN nanowires were grown on Si 111 substrates by plasma assisted molecular beam epitaxy. Raman spec...
Dislocation-free semiconductor nanowires are an extremely promising route towards compound semicondu...
InN nanowires with high efficiency photoluminescence emission at 0.80 eV are reported for the first ...
Photoconductivity has been systematically studied in unintentionally doped n-type InN film with supe...
[[sponsorship]]應用科學研究中心[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway/G...
An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method ...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
In this Letter, we demonstrate that with the merit of nanowire structure and a self-catalytic growth...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
Nanodevices using individual indium nitride nanowires are fabricated by e-beam lithography. The nano...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
InN nanowires were grown on Si 111 substrates by plasma assisted molecular beam epitaxy. Raman spec...
Dislocation-free semiconductor nanowires are an extremely promising route towards compound semicondu...
InN nanowires with high efficiency photoluminescence emission at 0.80 eV are reported for the first ...
Photoconductivity has been systematically studied in unintentionally doped n-type InN film with supe...
[[sponsorship]]應用科學研究中心[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway/G...
An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method ...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
In this Letter, we demonstrate that with the merit of nanowire structure and a self-catalytic growth...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...