Add to ORKG[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1089-5639&DestApp=JCR&RQ=IF_CAT_BOXPLO
The interaction of InN epitaxial films grown by r.f. plasma assisted molecular beam epitaxy with ato...
8 ABSTRACT: Anew system for obtaining high quality nonpolar InN films has been demonstrated. It is f...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
碩士電子工程學系[[abstract]]以電漿輔助分子束磊晶法來生長氮化銦薄膜。探究及最佳化不同低溫氮化銦緩衝層厚度以及不同氮化銦薄膜生長溫度，用來得到一個較佳生長條件。當減小低溫氮化銦緩衝層厚度到2...
The nucleation and the surface morphology of thin InN layers grown by using molecular beam epitaxy o...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
In this study, InN films with thickness up to 7.5 micron were prepared by molecular beam epitaxy (MB...
The method of In bilayer pre-deposition and penetrated nitridation had been proposed, which had been...
The role of point defects related to the presence of excess nitrogen is elucidated for InN thin film...
The role of point defects related to the presence of excess nitrogen is elucidated for InN thin film...
Wurtzite structure InN films were prepared on Si(100) substrates using radio-frequency metal-organic...
The authors demonstrate the impact of growth kinetics on the surface and structural properties of N-...
We study the impact of substrate temperature and layer thickness on the morphological and structural...
The interaction of InN epitaxial films grown by r.f. plasma assisted molecular beam epitaxy with ato...
8 ABSTRACT: Anew system for obtaining high quality nonpolar InN films has been demonstrated. It is f...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
碩士電子工程學系[[abstract]]以電漿輔助分子束磊晶法來生長氮化銦薄膜。探究及最佳化不同低溫氮化銦緩衝層厚度以及不同氮化銦薄膜生長溫度，用來得到一個較佳生長條件。當減小低溫氮化銦緩衝層厚度到2...
The nucleation and the surface morphology of thin InN layers grown by using molecular beam epitaxy o...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
In this study, InN films with thickness up to 7.5 micron were prepared by molecular beam epitaxy (MB...
The method of In bilayer pre-deposition and penetrated nitridation had been proposed, which had been...
The role of point defects related to the presence of excess nitrogen is elucidated for InN thin film...
The role of point defects related to the presence of excess nitrogen is elucidated for InN thin film...
Wurtzite structure InN films were prepared on Si(100) substrates using radio-frequency metal-organic...
The authors demonstrate the impact of growth kinetics on the surface and structural properties of N-...
We study the impact of substrate temperature and layer thickness on the morphological and structural...
The interaction of InN epitaxial films grown by r.f. plasma assisted molecular beam epitaxy with ato...
8 ABSTRACT: Anew system for obtaining high quality nonpolar InN films has been demonstrated. It is f...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...