Add to ORKG[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0009-2614&DestApp=JCR&RQ=IF_CAT_BOXPLO
Oriented SiC nanowires were prepared by reacting aligned carbon nanotubes with SiO at 1400 °C for 2 ...
Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest due to its useful...
Nanoparticles have attracted much attention because of their unusual physical properties. This work ...
A one step procedure has been developed to grow beta-silicon carbide (beta-SiC) nanorods from a soli...
Straight beta-silicon carbide nanorods have been grown on silicon wafers using hot filament chemical...
Beta-silicon carbide (beta-SiC) nanorods (diameter, ca. 5-20 nm; length, 1 mu m) have been grown on ...
Silicon carbide (SiC) nanowires were grown directly on Si substrates by thermal evaporation of WO3 a...
In this Letter, we report the synthesis of beta-SiC nanorods by the pyrolysis of a polysilazane poly...
In this Letter, we report the synthesis of β-SiC nanorods by the pyrolysis of a polysilazane polymer...
A one-step procedure has been developed to grow beta-SiC nanorods from a solid carbon and silicon so...
A two-step reaction scheme has been employed for the synthesis of SiC nanorods at 1400 degrees C. Si...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
In this paper, a simple method to synthesize silicon carbide (SiC) nanoribbons is presented. Silicon...
Ce travail s’inscrit dans le cadre de la caractérisation physique de nanofils (NF) semiconducteurs (...
Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest owing to useful m...
Oriented SiC nanowires were prepared by reacting aligned carbon nanotubes with SiO at 1400 °C for 2 ...
Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest due to its useful...
Nanoparticles have attracted much attention because of their unusual physical properties. This work ...
A one step procedure has been developed to grow beta-silicon carbide (beta-SiC) nanorods from a soli...
Straight beta-silicon carbide nanorods have been grown on silicon wafers using hot filament chemical...
Beta-silicon carbide (beta-SiC) nanorods (diameter, ca. 5-20 nm; length, 1 mu m) have been grown on ...
Silicon carbide (SiC) nanowires were grown directly on Si substrates by thermal evaporation of WO3 a...
In this Letter, we report the synthesis of beta-SiC nanorods by the pyrolysis of a polysilazane poly...
In this Letter, we report the synthesis of β-SiC nanorods by the pyrolysis of a polysilazane polymer...
A one-step procedure has been developed to grow beta-SiC nanorods from a solid carbon and silicon so...
A two-step reaction scheme has been employed for the synthesis of SiC nanorods at 1400 degrees C. Si...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
In this paper, a simple method to synthesize silicon carbide (SiC) nanoribbons is presented. Silicon...
Ce travail s’inscrit dans le cadre de la caractérisation physique de nanofils (NF) semiconducteurs (...
Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest owing to useful m...
Oriented SiC nanowires were prepared by reacting aligned carbon nanotubes with SiO at 1400 °C for 2 ...
Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest due to its useful...
Nanoparticles have attracted much attention because of their unusual physical properties. This work ...