Add to ORKG[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0003-6951&DestApp=JCR&RQ=IF_CAT_BOXPLO
The thermal stability of InN layers grown on sapphire by high-pressure chemical vapor deposition has...
The thermal stability of InN in the growth environment in metalorganic chemical vapor deposition was...
Indium nitride (InN) has been made the first time by a combined thermal/UV photo-assisted process. I...
10.1088/0022-3727/29/12/010Journal of Physics D: Applied Physics29122997-3002JPAP
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
Ion beam nitridation of indium phosphide (100) substrates was studied using x-ray photoelectron spec...
This work deals with the nitridation of the indium phosphide. Indium phosphide is a III-V semiconduc...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
The nitridation of InP(1 0 0) surfaces has been studied using synchrotron radiation photoemission. T...
Several types of indium nitride films presently available have been studied with ion beam techniques...
Concentration profiles of nitrogen in vacuum-annealed p- and n-type single-crystal (1 0 0) InP impla...
The nucleation and the surface morphology of thin InN layers grown by using molecular beam epitaxy o...
Results of Rietveld refinement for indium nitride data collected in the temperature range 105-295 K ...
For some InN films large amounts of excess nitrogen are seen at low growth temperatures. Recent stud...
The evolution of thin InN overlayer grown on InP(100) substrate versus the duration of nitridation p...
The thermal stability of InN layers grown on sapphire by high-pressure chemical vapor deposition has...
The thermal stability of InN in the growth environment in metalorganic chemical vapor deposition was...
Indium nitride (InN) has been made the first time by a combined thermal/UV photo-assisted process. I...
10.1088/0022-3727/29/12/010Journal of Physics D: Applied Physics29122997-3002JPAP
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
Ion beam nitridation of indium phosphide (100) substrates was studied using x-ray photoelectron spec...
This work deals with the nitridation of the indium phosphide. Indium phosphide is a III-V semiconduc...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
The nitridation of InP(1 0 0) surfaces has been studied using synchrotron radiation photoemission. T...
Several types of indium nitride films presently available have been studied with ion beam techniques...
Concentration profiles of nitrogen in vacuum-annealed p- and n-type single-crystal (1 0 0) InP impla...
The nucleation and the surface morphology of thin InN layers grown by using molecular beam epitaxy o...
Results of Rietveld refinement for indium nitride data collected in the temperature range 105-295 K ...
For some InN films large amounts of excess nitrogen are seen at low growth temperatures. Recent stud...
The evolution of thin InN overlayer grown on InP(100) substrate versus the duration of nitridation p...
The thermal stability of InN layers grown on sapphire by high-pressure chemical vapor deposition has...
The thermal stability of InN in the growth environment in metalorganic chemical vapor deposition was...
Indium nitride (InN) has been made the first time by a combined thermal/UV photo-assisted process. I...