[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0959-9428&DestApp=JCR&RQ=IF_CAT_BOXPLO
To improve light extraction from GaN-based light-emitting diodes (LEDs), we demonstrated an approach...
We investigated curbing the defects and stress/strain in epitaxially grown crystalline GaN films on ...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
This study aimed to investigate the photoelectrochemical properties of GaN for solar hydrogen gas ap...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
International audienceThis paper proposes a new technique to engineer the Fin channel in vertical Ga...
We have investigated Ar-plasma etching characteristics of n-GaN with and without additional UV irrad...
This study demonstrates improvement of crystal quality of GaN film by growing it on a micro-faceted ...
We demonstrated an innovative lateral epitaxy method to grow c-plane GaN film using serpentine maske...
We investigated curbing the defects and stress/strain in epitaxially grown crystalline GaN films on ...
The etch rate of GaN under W-assisted photoelectrochemical conditions in KOH solutions is found to b...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
To improve light extraction from GaN-based light-emitting diodes (LEDs), we demonstrated an approach...
We investigated curbing the defects and stress/strain in epitaxially grown crystalline GaN films on ...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
This study aimed to investigate the photoelectrochemical properties of GaN for solar hydrogen gas ap...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
International audienceThis paper proposes a new technique to engineer the Fin channel in vertical Ga...
We have investigated Ar-plasma etching characteristics of n-GaN with and without additional UV irrad...
This study demonstrates improvement of crystal quality of GaN film by growing it on a micro-faceted ...
We demonstrated an innovative lateral epitaxy method to grow c-plane GaN film using serpentine maske...
We investigated curbing the defects and stress/strain in epitaxially grown crystalline GaN films on ...
The etch rate of GaN under W-assisted photoelectrochemical conditions in KOH solutions is found to b...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...
To improve light extraction from GaN-based light-emitting diodes (LEDs), we demonstrated an approach...
We investigated curbing the defects and stress/strain in epitaxially grown crystalline GaN films on ...
[[sponsorship]]原子與分子科學研究所[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway...