Radiation induced degradation in a 150-nm CMOS SPADs device

The effects induced by radiation on an innovative photo-sensor consisting of Single-Photon Avalanche Diodes arrays, implemented in a 150-nm CMOS technology, are presented. Samples were irradiated with a proton beam at different doses, and the impact of radiation-induced damage on the performance of the devices in terms of Dark Count Rate has been estimated. Furthermore, possible methods to reduce the impact of radiation-induced damage are discussed