Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
- Bégon-Lours, Laura
- Halter, Mattia
- Puglisi, Francesco Maria
- Benatti, Lorenzo
- Falcone, Donato Francesco
- Popoff, Youri
- Dávila Pineda, Diana
- Sousa, Marilyne
- Offrein, Bert Jan
DOIAbstract
Ohmic, memristive synaptic weights are fabricated with a back-end-of-line compatible process, based on a 3.5 nm HfZrO4 thin film crystallized in the ferroelectric phase at only 400 degrees C. The current density is increased by three orders of magnitude compared to the state-of-the-art. The use of a metallic oxide interlayer, WOx, allows excellent retention (only 6% decay after 10(6) s) and endurance (10(10) full switching cycles). The On/Off of 7 and the small device-to-device variability (<5%) make them promising candidates for neural networks inference. The synaptic functionality for online learning is also demonstrated: using pulses of increasing (resp. constant) amplitude and constant (resp. increasing) duration, emulating spike-timing...
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