Strained Si/SiGe devices offer a route to high speed digital devices. Analog design trade-offs can also be improved using strained Si if device self-heating can be controlled; strained Si is generated using a strain relaxed buffer (SRB) of SiGe which has a lower thermal conductivity compared with bulk Si. In this work the impact of the SiGe SRB thickness on the analog performance of strained Si nMOSFETs is investigated. The negative drain conductance caused by self heating at high power levels leads to negative self gain and anomalous circuit behavior in terms of nonlinear phase shifts. By using ac and dc measurements we show that by reducing the SRB thickness self-heating effects are significantly lower and the analog design space is impro...
Pulsed measurements are used to investigate self-heating in strained-Si MOSFETs. From analysis of th...
Strained-Si based SiGe MODFETs on ultra-thin SiGe virtual substrates prepared by molecular beam epit...
Enhancements of up to 100% in transconductance, mobility and on-current performance are demonstrated...
The impact of the thickness of the silicon–germanium strain-relaxed buffer (SiGe SRB) on the analog ...
Electrical results are presented for deep submicron strained Si MOSFETs fabricated on both thick and...
The impact of self-heating in strained-Si MOSFETs on the switching characteristics of a complementar...
Strained Si is recognised as a necessary technology booster for the nanoelectronics regime. This wor...
In this study, material investigations of strained Si/SiGe platforms for MOSFET applications are pre...
From the viewpoint of the silicon thickness limit for mobility enhancement in a strained Si channel,...
Substrate engineering innovations such as SOI and the use of Si/SiGe virtual substrates become neces...
This paper is made available online in accordance with publisher policies. Please scroll down to vie...
We introduce a strained-SiGe technology adopting different thicknesses of Si cap layers towards low ...
The short-channel performance of compressively strained Si0.77Ge0.23 pMOSFETs with HfSiOx/TiSiN gate...
The short-channel performance of compressively strained Si0.77Ge0.23 pMOSFETs with HfSiOx/TiSiN gate...
Performance enhancements of up to 170% in drain current, maximum transconductance, and field-effect ...
Pulsed measurements are used to investigate self-heating in strained-Si MOSFETs. From analysis of th...
Strained-Si based SiGe MODFETs on ultra-thin SiGe virtual substrates prepared by molecular beam epit...
Enhancements of up to 100% in transconductance, mobility and on-current performance are demonstrated...
The impact of the thickness of the silicon–germanium strain-relaxed buffer (SiGe SRB) on the analog ...
Electrical results are presented for deep submicron strained Si MOSFETs fabricated on both thick and...
The impact of self-heating in strained-Si MOSFETs on the switching characteristics of a complementar...
Strained Si is recognised as a necessary technology booster for the nanoelectronics regime. This wor...
In this study, material investigations of strained Si/SiGe platforms for MOSFET applications are pre...
From the viewpoint of the silicon thickness limit for mobility enhancement in a strained Si channel,...
Substrate engineering innovations such as SOI and the use of Si/SiGe virtual substrates become neces...
This paper is made available online in accordance with publisher policies. Please scroll down to vie...
We introduce a strained-SiGe technology adopting different thicknesses of Si cap layers towards low ...
The short-channel performance of compressively strained Si0.77Ge0.23 pMOSFETs with HfSiOx/TiSiN gate...
The short-channel performance of compressively strained Si0.77Ge0.23 pMOSFETs with HfSiOx/TiSiN gate...
Performance enhancements of up to 170% in drain current, maximum transconductance, and field-effect ...
Pulsed measurements are used to investigate self-heating in strained-Si MOSFETs. From analysis of th...
Strained-Si based SiGe MODFETs on ultra-thin SiGe virtual substrates prepared by molecular beam epit...
Enhancements of up to 100% in transconductance, mobility and on-current performance are demonstrated...