A comparative evaluation is provided in this paper regarding two design approaches for Ka-band Gallium Nitride Power Amplifiers. The first approach uses the standard electrical models provided by the foundry, while the alternative approach uses a custom model derived from in-house load-pull characterization. Both Power Amplifiers are designed to provide 30 dBm output power and 30% efficiency in the 31 - 35 GHz bandwidth. It is shown that the PA based on the custom model has a better PAE performance by about 4% and higher output power by 0.3 dB. </p
In this contribution the research activities and trends in the field of RF and microwave power ampli...
In this contribution, the design and full characterisation of a high efficiency Ultra-Wide-Band powe...
The guidelines for designing a high efficiency and low distortion 2-stages Gallium Nitride (GaN) pow...
This paper presents the design and analysis issues related to the use of recent GaN technologies for...
This paper proposes a design method to minimize the phase distortion (AM/PM) in Gallium Nitride (GaN...
Most wireless systems must be able to output a high enough output power to serve their purpose. A po...
The need for high power, highly efficient, multi-band and multi-mode radio frequency (RF) and microw...
The design and implementation of a class-J mode RF power amplifier is described. The experimental re...
In this contribution the features of GaN technology for power applications will be explored from the...
Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, t...
This paper proposed a novel internally pre-matching network for high power and high efficiency power...
This article presents the winning power amplifier implemented with a gallium nitride (GaN) high elec...
This thesis discusses the design, fabrication, and testing of a high efficiency, dual band radio fre...
This paper reports the design, implementation, and experimental results of two high efficiency GaN-H...
In this contribution the research activities and trends in the field of RF and microwave power ampli...
In this contribution, the design and full characterisation of a high efficiency Ultra-Wide-Band powe...
The guidelines for designing a high efficiency and low distortion 2-stages Gallium Nitride (GaN) pow...
This paper presents the design and analysis issues related to the use of recent GaN technologies for...
This paper proposes a design method to minimize the phase distortion (AM/PM) in Gallium Nitride (GaN...
Most wireless systems must be able to output a high enough output power to serve their purpose. A po...
The need for high power, highly efficient, multi-band and multi-mode radio frequency (RF) and microw...
The design and implementation of a class-J mode RF power amplifier is described. The experimental re...
In this contribution the features of GaN technology for power applications will be explored from the...
Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, t...
This paper proposed a novel internally pre-matching network for high power and high efficiency power...
This article presents the winning power amplifier implemented with a gallium nitride (GaN) high elec...
This thesis discusses the design, fabrication, and testing of a high efficiency, dual band radio fre...
This paper reports the design, implementation, and experimental results of two high efficiency GaN-H...
In this contribution the research activities and trends in the field of RF and microwave power ampli...
In this contribution, the design and full characterisation of a high efficiency Ultra-Wide-Band powe...
The guidelines for designing a high efficiency and low distortion 2-stages Gallium Nitride (GaN) pow...