Zu einigen Fragen der Modellierung und Simulation bei der Entwicklung von SiGe-Heterojunction-Bipolartransistoren

The aim of this paper is to show that the cooperation of mathematicians with physicists and engineers in the field of modelling and simulation effectively supports the design of modern nanoelectronic devices such as SiGe-HBTs. Because of their promising properties these transistors are expected to find many applications in the booming market for wireless systems. Moreover, they could be manufactured at low cost in large volume. The design of SiGe-HBTs requires among others the numerical simulation of basic fabrication steps and of the electrical behaviour of the devices theirselves. Corresponding simulation programs must be improved continuously. This again implies the necessity of mathematical investigations concerned with model equations which the simulation programs are based on. Here this will be demonstrated by typical examples