Analyzing the Back-Gating Effect in GaN HEMTs with Field-Plates Using an Empirical Trap Model

This paper investigates the influence of field-plates on the trapping effects in GaN HEMTs. Conclusions are drawn from the comparison of the extracted parameters of a Shockley-Read-Hall theory-based empirical trap model for devices with and without field-plates. The model separates the influence of the trap potential and the modulation of the drain-source current due to the trapped electrons. Lower trap potential is observed in the presence of a field-plate due to a lower number of trapped electrons. On the other hand, the trapped charges have a larger influence on the current in the field-plated devices. The extracted parameters, therefore, show a trade-off between reduced trap potential and increased influence on the current in the device with the added field-plate