Free engineering of buried oxide patterns in GaAs/AlAs epitaxial structures
- Almuneau, Guilhem
- Amat, C.
- Gallo, P.
- Jalabert, Laurent
- Moumdji, S.
- Dubreuil, Pascal
- Camps, T.
- Doucet, Jean Baptiste
- Havard, E.
- Bardinal, Véronique
- Fontaine, Chantal
- Muñoz-Yagüe, A.
Publication date
June 2007
DOI Publisher
Institution of Engineering and Technology (IET)Abstract
International audienceThe formation of a buried aluminium oxide from the surface of a GaAs/AlAs epitaxial structure is presented and validated through the localised electroluminescence in a light emitting diode device. This oxidation method relies on photolithography, plasma treatment and wet thermal oxidation. This enables localised buried oxide areas to be formed by a vertical oxidation process applied from the surface. Because of this new technology, the shape of the oxidised areas can be freely designed, unlike when using the standard lateral oxidation technology
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