Coherent spin manipulations of spin-32 color center ensembles in 6H-SiC crystal have been studied in high magnetic fields using methods of pulsed electron paramagnetic resonance, Rabi oscillations, and pulsed electron-electron double resonance under optical alignment conditions of the spin level populations. Rabi oscillation experiments show room temperature coherent control of these spin-32 color center ensembles in strong magnetic fields. A sharp decrease of the spin-lattice relaxation time T1, ∼40 times, was observed in 6H-SiC at magnetic field of ∼3.5 T with increasing temperature from 100 to 300 K, while the spin-spin relaxation time T2 is only shortened by ∼1.3 times. With an increase in the magnetic field, the times T1 and T2 were sh...
Paramagnetic defects and nuclear spins are the major sources of magnetic-field-dependent spin relaxa...
The electron spins of semiconductor defects can have complex interactions with their host, particula...
We demonstrate optically pumped dynamic nuclear polarization of Si-29 nuclear spins that are strongl...
Spin-active color centers in solids show good performance for quantum technologies. Several transiti...
© 2016, Springer-Verlag Wien.Atomic-scale colour centres in bulk and nanocrystalline SiC are promisi...
It is demonstrated that Silicon carbide (SiC) with a natural isotope abundance can preserve a cohere...
We present the detailed study of the spin kinetics of the nitrogen (N) donor electrons in 6H SiC waf...
Divacancy spins implement qubits with outstanding characteristics and capabilities in an industrial ...
High-frequency pulsed electron paramagnetic resonance (EPR) and electron nuclear double resonance (E...
Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transi...
Atomic-scale colour centres in bulk and nanocrystalline SiC are promising systems for quantum photon...
Color centers in wide-bandgap semiconductors, including diamond and silicon carbide (SiC), are attra...
Room-temperature optically detected magnetic resonance experiments on spin- 3 2 silicon vacancies in...
Paramagnetic defects and nuclear spins are the major sources of magnetic-field-dependent spin relaxa...
The electron spins of semiconductor defects can have complex interactions with their host, particula...
We demonstrate optically pumped dynamic nuclear polarization of Si-29 nuclear spins that are strongl...
Spin-active color centers in solids show good performance for quantum technologies. Several transiti...
© 2016, Springer-Verlag Wien.Atomic-scale colour centres in bulk and nanocrystalline SiC are promisi...
It is demonstrated that Silicon carbide (SiC) with a natural isotope abundance can preserve a cohere...
We present the detailed study of the spin kinetics of the nitrogen (N) donor electrons in 6H SiC waf...
Divacancy spins implement qubits with outstanding characteristics and capabilities in an industrial ...
High-frequency pulsed electron paramagnetic resonance (EPR) and electron nuclear double resonance (E...
Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transi...
Atomic-scale colour centres in bulk and nanocrystalline SiC are promising systems for quantum photon...
Color centers in wide-bandgap semiconductors, including diamond and silicon carbide (SiC), are attra...
Room-temperature optically detected magnetic resonance experiments on spin- 3 2 silicon vacancies in...
Paramagnetic defects and nuclear spins are the major sources of magnetic-field-dependent spin relaxa...
The electron spins of semiconductor defects can have complex interactions with their host, particula...
We demonstrate optically pumped dynamic nuclear polarization of Si-29 nuclear spins that are strongl...