This paper presents memory Built-In Self-Repair approaches allowing to achieve high yield for defect densities several orders of magnitude higher than in current technologies. Such repair schemes illustrate that we could built memories in nanoelectronic technologies that are subject to very high defect densities
Newer defects in memories arising from shrinking manufacturing technologies demand improved memory t...
In future nanotechnologies failure densities are predicted to be several orders of magnitude higher ...
[[abstract]]The advancement of deep submicrometer Integrated circuit manufacturing technology has pu...
Memory Built In Self Repair (BISR) is gaining importance since several years. Because defect densiti...
Memory Built In Self Repair (BISR) is gaining importance since several years. New fault tolerance ap...
International audienceWe illustrate that memory repair for high defect densities allows improving yi...
Nanometer memories are highly prone to defects due to dense structure, necessitating memory built-in...
Nanometer memories are highly prone to defects due to dense structure, necessitating memory built-in...
Nanometer memories are highly prone to defects due to dense structure, necessitating memory built-in...
Nanometer memories are highly prone to defects due to dense structure, necessitating memory built-in...
International audienceWe illustrate that memory repair for high fault rates can be exploited for imp...
Abstract — We propose a built-in self-test (BIST) procedure for nanofabrics implemented using chemic...
Newer defects in memories arising from shrinking manufacturing technologies demand improved memory t...
International audienceWe illustrate that memory repair for high fault rates allows improving yield, ...
Newer defects in memories arising from shrinking manufacturing technologies demand improved memory t...
Newer defects in memories arising from shrinking manufacturing technologies demand improved memory t...
In future nanotechnologies failure densities are predicted to be several orders of magnitude higher ...
[[abstract]]The advancement of deep submicrometer Integrated circuit manufacturing technology has pu...
Memory Built In Self Repair (BISR) is gaining importance since several years. Because defect densiti...
Memory Built In Self Repair (BISR) is gaining importance since several years. New fault tolerance ap...
International audienceWe illustrate that memory repair for high defect densities allows improving yi...
Nanometer memories are highly prone to defects due to dense structure, necessitating memory built-in...
Nanometer memories are highly prone to defects due to dense structure, necessitating memory built-in...
Nanometer memories are highly prone to defects due to dense structure, necessitating memory built-in...
Nanometer memories are highly prone to defects due to dense structure, necessitating memory built-in...
International audienceWe illustrate that memory repair for high fault rates can be exploited for imp...
Abstract — We propose a built-in self-test (BIST) procedure for nanofabrics implemented using chemic...
Newer defects in memories arising from shrinking manufacturing technologies demand improved memory t...
International audienceWe illustrate that memory repair for high fault rates allows improving yield, ...
Newer defects in memories arising from shrinking manufacturing technologies demand improved memory t...
Newer defects in memories arising from shrinking manufacturing technologies demand improved memory t...
In future nanotechnologies failure densities are predicted to be several orders of magnitude higher ...
[[abstract]]The advancement of deep submicrometer Integrated circuit manufacturing technology has pu...