A novel design technique is proposed for storage elements which are insensitive to radiation-induced single-event upsets. This technique is suitable for implementation in high density ASICs and static RAMs using submicron CMOS technology
UnrestrictedWith aggressive technology scaling, radiation-induced soft errors have become a major th...
An improved state-space analysis of the CMOS static RAM cell is presented. Introducing the concept o...
As transistor sizes scale down to nanometres dimensions, CMOS circuits become more sensitive to radi...
This paper presents the design of a static RAM cell in 65 nm CMOS technology. A good level of radiat...
In radioactive environments, particle strikes can induce transient errors in integrated circuits (IC...
Radiation from terrestrial and space environments is a great danger to integrated circuits (ICs). A ...
Static random access memory cells (SRAM) are high-speed semiconductor memory that uses flip-flop to...
A 512 kbit static random access memory has been designed and fabricated in a single-poly, six-metal ...
The radiation environment present in some of today's High-Energy Physics (HEP) experiments and in sp...
The SEU hardness of a new CMOS storage cell based on latch redundancy has been analyzed using a lase...
In the electronics space industry, memory cells are one of the main concerns, especially in term of ...
A radiation strike on semiconductor device may lead to charge collection, which may manifest as a wr...
Technology scaling of CMOS devices has made the integrated circuits vulnerable to single event radia...
This thesis discusse s th e issues r elated to the us e of enclosed-gate layou t trans isto rs and ...
FPGAs are an attractive alternative for many space-based computing operations. While radiation harde...
UnrestrictedWith aggressive technology scaling, radiation-induced soft errors have become a major th...
An improved state-space analysis of the CMOS static RAM cell is presented. Introducing the concept o...
As transistor sizes scale down to nanometres dimensions, CMOS circuits become more sensitive to radi...
This paper presents the design of a static RAM cell in 65 nm CMOS technology. A good level of radiat...
In radioactive environments, particle strikes can induce transient errors in integrated circuits (IC...
Radiation from terrestrial and space environments is a great danger to integrated circuits (ICs). A ...
Static random access memory cells (SRAM) are high-speed semiconductor memory that uses flip-flop to...
A 512 kbit static random access memory has been designed and fabricated in a single-poly, six-metal ...
The radiation environment present in some of today's High-Energy Physics (HEP) experiments and in sp...
The SEU hardness of a new CMOS storage cell based on latch redundancy has been analyzed using a lase...
In the electronics space industry, memory cells are one of the main concerns, especially in term of ...
A radiation strike on semiconductor device may lead to charge collection, which may manifest as a wr...
Technology scaling of CMOS devices has made the integrated circuits vulnerable to single event radia...
This thesis discusse s th e issues r elated to the us e of enclosed-gate layou t trans isto rs and ...
FPGAs are an attractive alternative for many space-based computing operations. While radiation harde...
UnrestrictedWith aggressive technology scaling, radiation-induced soft errors have become a major th...
An improved state-space analysis of the CMOS static RAM cell is presented. Introducing the concept o...
As transistor sizes scale down to nanometres dimensions, CMOS circuits become more sensitive to radi...
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