Modeling of non-equilibrium effects in silicon irradiated by pulsed laser

In this paper, we use the methods of mathematical modeling to investigate the action of laser pulse (picosecond) with a wave length of λL=0.53μm and the photon energy exceeding the band gap of silicon ħω>Eg on silicon target. The main feature of these regimes of laser irradiation is strong non-equilibrium of heating and melting processes, which is manifested in a large temperature difference between the carriers and the lattice