4 pages, 3 figuresJournal-ref: Physical Review B 76, 041403(R) (2007)International audienceWe present a scanning tunneling microscopy (STM) study of a gently-graphitized 6H-SiC(0001) surface in ultra high vacuum. From an analysis of atomic scale images, we identify two different kinds of terraces, which we unambiguously attribute to mono- and bilayer graphene capping a C-rich interface. At low temperature, both terraces show $(\sqrt{3}\times \sqrt{3})$ quantum interferences generated by static impurities. Such interferences are a fingerprint of $\pi$-like states close to the Fermi level. We conclude that the metallic states of the first graphene layer are almost unperturbed by the underlying interface, in agreement with recent photoemission...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
International audienceThe early stage of graphene formation on the 6H-SiC 0001¯ surface is investiga...
24 pagesInternational audienceWe examine in detail the structure and the evolution upon annealing of...
International audienceWe present an investigation of the atomic and electronic structure of graphene...
73.20.-r 68.55.-aInternational audienceThe early stages of the graphitization of the 6H-SiC(000N1) (...
International audienceWe present an investigation of the atomic and electronic structure of graphene...
The 5×5,6√3×6√3−R30° and graphene-covered 6√3×6√3−R30° reconstructions of the SiC(0001) surface are ...
On the SiC(0001) surface (the silicon face of SiC), epitaxial graphene is obtained by sublimation of...
On the SiC(0001) surface (the silicon face of SiC), epitaxial graphene is obtained by sublimation of...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
International audienceThe early stage of graphene formation on the 6H-SiC 0001¯ surface is investiga...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
International audienceThe early stage of graphene formation on the 6H-SiC 0001¯ surface is investiga...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
International audienceThe early stage of graphene formation on the 6H-SiC 0001¯ surface is investiga...
24 pagesInternational audienceWe examine in detail the structure and the evolution upon annealing of...
International audienceWe present an investigation of the atomic and electronic structure of graphene...
73.20.-r 68.55.-aInternational audienceThe early stages of the graphitization of the 6H-SiC(000N1) (...
International audienceWe present an investigation of the atomic and electronic structure of graphene...
The 5×5,6√3×6√3−R30° and graphene-covered 6√3×6√3−R30° reconstructions of the SiC(0001) surface are ...
On the SiC(0001) surface (the silicon face of SiC), epitaxial graphene is obtained by sublimation of...
On the SiC(0001) surface (the silicon face of SiC), epitaxial graphene is obtained by sublimation of...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
International audienceThe early stage of graphene formation on the 6H-SiC 0001¯ surface is investiga...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
International audienceThe early stage of graphene formation on the 6H-SiC 0001¯ surface is investiga...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
International audienceThe early stage of graphene formation on the 6H-SiC 0001¯ surface is investiga...