Prediction of transients induced by neutrons/protons in CMOS combinational logic cells
- Hubert, A.
- Bougerol, A.
- Miller, F.
- Buard, N.
- Anghel, Lorena
- Carriere, T.
- Wrobel, Frédéric
- Gaillard, R.
Publication date
January 2006
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
International audienceThis paper presents a new Monte-Carlo methodology to investigate the transient effect occurrence in complementary metal oxide semiconductor (CMOS) logic circuits: TMC DASIE (transient Monte-Carlo detailed analysis of secondary ion effects). The production and effects of single-event transients inside CMOS combinational logic gates are examined. First results and perspectives are presented
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