Resonant tunneling with superlattice emitters

In this study we examine the effect of superlattice (SL) structures as electron injectors to asymmetric double barrier resonant tunneling diodes (ADBRTDs). The experiment consisted of growing devices with five periods of GaAs/AlAs SLs prior to the ADBRT structure in the growth direction. The periods of SL used in our characterization were 50 angstrom/ 50 angstrom, 30 angstrom/ 30 angstrom and 15 angstrom/ 15 angstrom. Observations of the effect of the SL period on the first resonance level in forward bias and reverse bias were made. Phonon assisted tunneling was also observed