Ellipticity and Faraday rotation due to a two-dimensional electron gas in a metal-oxide-semiconductor system

We calculate the ellipticity and Faraday rotation due to the two-dimensional electron gas at the oxide-semiconductor interface of a metal-oxide-semiconductor system. The results obtained are radically different from those we previously obtained using the single-pass three-dimensional Drude model. To track down the difference, we extended the latter model to include boundary effects at the inversion-layer interfaces as well as multiple-reflection effects within the inversion layer, and we find that, as the inversion-layer thickness goes to zero (compared to the wave-length of the radiation), we reproduce the two-dimensional-model results. © 1982 The American Physical Society