Effect of a finite semiconductor substrate on the faraday rotation and ellipticity in a metal-oxide-semiconductor system

In this work we study the effect of a finite semiconductor substrate on the Faraday rotation and ellipticity in a metal-oxide-semiconductor system. We find that the multiple reflections within the semiconductor substrate can give an enhancement by factors of up to 2.5 over the case where the semiconductor is considered semi-infinite. In addition, the ellipticity is markedly changed and, in particular, null values may be obtained in contrast with the results obtained without multiple reflections within the semiconductor. © 1983