The Ga/Si(1 1 2) interface consists of a self-assembled, mesoscopic array of atomic wires on a high-index Si(1 1 2) surface. The structural uniformity of the atomic-wires or quantum-wire array appears far superior to those created by nano-lithography or STM atom manipulation, which presents an interesting opportunity to explore electronic transport in atomic wires of mesoscopic length. The structure and electronic structure of the atomic-wire array is investigated by means of first-principles total-energy calculations and photoemission experiments. The electronic conduction channels appear to be orthogonal to the crystallographic chains. © 2002 Published by Elsevier Science B.V
We have studied the effect of hydrogen passivation and inter-wire interaction on the electronic stru...
We have studied the effect of hydrogen passivation and inter-wire interaction on the electronic stru...
As the Si-CMOS technology approaches the end of the International Technology Roadmap for Semiconduct...
[[abstract]]The Ga/Si(1 1 2) interface consists of a self-assembled, mesoscopic array of “atomic wir...
Quantum wires, as a smallest electronic conductor, are expected to be a fundamental component in all...
A superlattice of strained Au-Si atomic wires is successfully fabricated on a Si surface. Au atoms a...
One-dimensional (1D) solid state systems can behave drastically different from their higher dimensio...
One-dimensional (1D) solid state systems can behave drastically different from their higher dimensio...
Many quasi-one-dimensional (1D) materials are experimental approximations to the textbook models of ...
A superlattice of strained Au–Si atomic wires is successfully fabricated on a Si surface. Au atoms a...
It has become possible to assemble one-dimensional atom chains at stepped surfaces with atomic preci...
In this master thesis I have investigated one-dimensional nanostructures, so called quantum wires. T...
Metal on semiconductor surfaces has been the topic of intense studies due to its technological appli...
Nanowires are almost cylindrical structures, with diameter typically ranging from 1 to 100 nm, and l...
A single line of dangling bonds (DBs) on Si(100)-2 7 1:H surface forms a perfect metallic atomic-wi...
We have studied the effect of hydrogen passivation and inter-wire interaction on the electronic stru...
We have studied the effect of hydrogen passivation and inter-wire interaction on the electronic stru...
As the Si-CMOS technology approaches the end of the International Technology Roadmap for Semiconduct...
[[abstract]]The Ga/Si(1 1 2) interface consists of a self-assembled, mesoscopic array of “atomic wir...
Quantum wires, as a smallest electronic conductor, are expected to be a fundamental component in all...
A superlattice of strained Au-Si atomic wires is successfully fabricated on a Si surface. Au atoms a...
One-dimensional (1D) solid state systems can behave drastically different from their higher dimensio...
One-dimensional (1D) solid state systems can behave drastically different from their higher dimensio...
Many quasi-one-dimensional (1D) materials are experimental approximations to the textbook models of ...
A superlattice of strained Au–Si atomic wires is successfully fabricated on a Si surface. Au atoms a...
It has become possible to assemble one-dimensional atom chains at stepped surfaces with atomic preci...
In this master thesis I have investigated one-dimensional nanostructures, so called quantum wires. T...
Metal on semiconductor surfaces has been the topic of intense studies due to its technological appli...
Nanowires are almost cylindrical structures, with diameter typically ranging from 1 to 100 nm, and l...
A single line of dangling bonds (DBs) on Si(100)-2 7 1:H surface forms a perfect metallic atomic-wi...
We have studied the effect of hydrogen passivation and inter-wire interaction on the electronic stru...
We have studied the effect of hydrogen passivation and inter-wire interaction on the electronic stru...
As the Si-CMOS technology approaches the end of the International Technology Roadmap for Semiconduct...