Raman imaging characterization of structural and electrical properties in 4H SiC

International audienceRaman imaging measurements have been used to determine the spatial distribution of the doping level in n-type 4H-SiC wafers. The carrier concentration and mobility were determined from the line shape analysis of the LO phonon-plasmon coupled mode, using know procedures. The application of the method for mapping of the doping level at the wafer scale as well as in the vicinity of defects, for example micropipes, is demonstrated