Raman imaging analysis of SiC wafers

International audienceRecent improvements in the implementation of the technique make Raman spectroscopic imaging possible. Different systems have been developed to reduce recording and display times to reasonable levels. In this study, we have performed Raman imaging measurements for different 4HSiC wafers, and some test experiments performed on defective samples will be presented. Results were qualitatively interpreted in terms of residual strain fields and variations in the carrier concentration in the vicinity of the defects