The invention concerns a data storage method enabling error detection and correction in an organized storage for reading and writing words of a first number (m) of bits and optionally for modifying only part of such a word, comprising the following steps which consist in: associating an error detection and correction code with a group of a second number (k≧1) of words; and at each partial writing in the group of words, calculating a new code of the modified group of words; performing a verification operation and, if an error occurs, carrying out an error correction of the modified word and/or of the new code
Part I. Correction of Cell Defects in Integrated Memories: This paper introduces two schemes to corr...
Memory manufacturers have recently advanced silicon technology to implement the multi-level cell tec...
Techniques are disclosed for generating codes for representation of data in memory devices that may ...
International audienceTwo error correction schemes are proposed for word-oriented binary memories th...
We present an interesting version of error correcting codes that makes use of the idea o...
Error-correcting codes allow either incorrect data to be corrected or missing data to be rebuilt. Th...
Data reliability is very important in storage systems. To increase data reliability there are techni...
As technology scales, Single Event Upsets (SEU) become more common and affect a large number of memo...
The aim is to develop the organization methods of the devices for different ratio error correction i...
With ever increasing amount of digital data being generated everyday on various platforms the need f...
SIGLETIB: RN 7281 (117) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische Informationsbi...
The classic approach for error correction is to add controlled external redundancy to data. This app...
Field error correction coding is particularly suitable for applications in non-volatile flash memori...
Abstract: Now-a-days, the memory devices are susceptible to Single Event Upsets (SEU) which is one o...
The IBM 3850 Mass Storage System (MSS) stores digital data onflexible magnetic tape media; however, ...
Part I. Correction of Cell Defects in Integrated Memories: This paper introduces two schemes to corr...
Memory manufacturers have recently advanced silicon technology to implement the multi-level cell tec...
Techniques are disclosed for generating codes for representation of data in memory devices that may ...
International audienceTwo error correction schemes are proposed for word-oriented binary memories th...
We present an interesting version of error correcting codes that makes use of the idea o...
Error-correcting codes allow either incorrect data to be corrected or missing data to be rebuilt. Th...
Data reliability is very important in storage systems. To increase data reliability there are techni...
As technology scales, Single Event Upsets (SEU) become more common and affect a large number of memo...
The aim is to develop the organization methods of the devices for different ratio error correction i...
With ever increasing amount of digital data being generated everyday on various platforms the need f...
SIGLETIB: RN 7281 (117) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische Informationsbi...
The classic approach for error correction is to add controlled external redundancy to data. This app...
Field error correction coding is particularly suitable for applications in non-volatile flash memori...
Abstract: Now-a-days, the memory devices are susceptible to Single Event Upsets (SEU) which is one o...
The IBM 3850 Mass Storage System (MSS) stores digital data onflexible magnetic tape media; however, ...
Part I. Correction of Cell Defects in Integrated Memories: This paper introduces two schemes to corr...
Memory manufacturers have recently advanced silicon technology to implement the multi-level cell tec...
Techniques are disclosed for generating codes for representation of data in memory devices that may ...