Analytical low-frequency noise model in the linear region of lightly doped nanoscale double-gate metal-oxide-semiconductor field-effect transistors

International audienceAn analytical model for the transconductance to drain current ratio (gm/Id) of lightly doped nanoscale double-gate metal-oxide-semiconductor field-effect transistors (DG MOSFETs) has been developed in the weak inversion and from linear to saturation region, using the conductive path potential approach. The obtained analytical model for gm/Id in the weak inversion has been extended in the strong inversion and in the linear region including the short-channel effects, as well as the surface roughness scattering, series resistance, and saturation velocity effects. The obtained gm/Id model from weak to strong inversion has been verified by comparing simulation and experimental results of DG MOSFET with gate length 50 nm and it has been implemented in modeling the 1/f low-frequency noise. The introduced noise model has been validated by developing a Verilog-A transistor noise model, which is in good agreement with the experimental noise results of DG MOSFET with gate length 50 nm in the linear region from weak to strong inversion