International audienceDeep trench terminations are commonly known as a technique to achieve ideal breakdown voltages for high voltage devices. This paper presents the use of deep trench terminations as an original concept to integrate multiple vertical power devices on a common die. The concept is based on the creation of vertical deep trench terminations on the periphery of the devices, thus allowing to separate the drift regions and to completely insulate the multiple power devices sharing the same backside contact electrode. Power diodes in the range of 600V are fabricated and experimentally tested to validate the concept. The prototypes demonstrated excellent forward and reverse biased static characteristics
Le développement de l’énergie renouvelable loin des zones urbaines demande le transport d'une grande...
Dans une première partie, les travaux de thèse se sont focalisés sur la conception et l'optimisation...
[[abstract]]In this study, a novel termination is designed in a low-voltage N-channel trench power m...
International audienceIntegrating multiple power devices in the same die makes their implementation ...
Abstract — Numerous techniques have been used to improve the voltage handling capability of high vol...
International audienceTo fully achieve the performance which SiC power devices potentially have, it ...
A new type of high voltage termination, namely the “deep p-ring trench” termination design for high ...
The power electronics field is struggling for new material, technological and conceptual evolutions....
A new type of high-voltage termination, namely the 'deep p-ring trench' termination design for high-...
Among the numerous solutions developed to improve the voltage handling capability of superjunction p...
A major limitation on the performance of high-voltage power semiconductor is the edge termination of...
The 22nd International Symposium on Power Semiconductor Devices & Ics (ISPSD2010), 6月6日-10日, 2010年, ...
International audienceAmong the numerous solutions developed to improve the handling capability of s...
International audienceUsing finite element simulations with Sentaurus TCAD (Technology Computer-Aide...
New technological ways allowing the realization of deep trench Superjunction devices (diodes or MOS ...
Le développement de l’énergie renouvelable loin des zones urbaines demande le transport d'une grande...
Dans une première partie, les travaux de thèse se sont focalisés sur la conception et l'optimisation...
[[abstract]]In this study, a novel termination is designed in a low-voltage N-channel trench power m...
International audienceIntegrating multiple power devices in the same die makes their implementation ...
Abstract — Numerous techniques have been used to improve the voltage handling capability of high vol...
International audienceTo fully achieve the performance which SiC power devices potentially have, it ...
A new type of high voltage termination, namely the “deep p-ring trench” termination design for high ...
The power electronics field is struggling for new material, technological and conceptual evolutions....
A new type of high-voltage termination, namely the 'deep p-ring trench' termination design for high-...
Among the numerous solutions developed to improve the voltage handling capability of superjunction p...
A major limitation on the performance of high-voltage power semiconductor is the edge termination of...
The 22nd International Symposium on Power Semiconductor Devices & Ics (ISPSD2010), 6月6日-10日, 2010年, ...
International audienceAmong the numerous solutions developed to improve the handling capability of s...
International audienceUsing finite element simulations with Sentaurus TCAD (Technology Computer-Aide...
New technological ways allowing the realization of deep trench Superjunction devices (diodes or MOS ...
Le développement de l’énergie renouvelable loin des zones urbaines demande le transport d'une grande...
Dans une première partie, les travaux de thèse se sont focalisés sur la conception et l'optimisation...
[[abstract]]In this study, a novel termination is designed in a low-voltage N-channel trench power m...