Capacitance-voltage analysis of InAs quantum dots grown on InAlAs/InP(0 0 1)
- Saad, O.
- Baira, M.
- Ajjel, R.
- Maaref, Hassen
- Salem, B.
- Bremond, G.
- Gendry, M.
DOIAbstract
International audienceThe electronic properties of InAs quantum dots (QDs) grown on InAlAs/InP(001) were studied by using capacitance-voltage (C-V) analysis and photoluminescence (PL) measurements. The level positions of electrons and holes could be studied separately by using n- and p-type InAlAs matrices, respectively. The holes are found to be more confined than electrons in these kinds of dots
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