A simple approach to achieving ultrasmall III-nitride microlight-emitting diodes with red emission

The microdisplays for augmented reality and virtual reality require ultrasmall micro light-emitting-diodes (μLEDs) with a dimension of ≤5 μm. Furthermore, the microdisplays also need three kinds of such μLEDs each emitting red, green, and blue emission. Currently, in addition to a great challenge for achieving ultrasmall μLEDs mainly based on III-nitride semiconductors, another fundamental barrier is due to an extreme difficulty in growing III-nitride-based red LEDs. So far, there has not been any effective approach to obtain high indium content InGaN as an active region required for a red LED while maintaining high optical performance. In this paper, we have demonstrated a selective epitaxy growth approach using a template featuring microhole arrays. This allows us to not only obtain the natural formation of ultrasmall μLEDs but also achieve InGaN with enhanced indium content at an elevated growth temperature, at which it is impossible to obtain InGaN-based red LEDs on a standard planar surface. By means of this approach, we have demonstrated red μLEDs (at an emission wavelength of 642 nm) with a dimension of 2 μm, exhibiting a high luminance of 3.5 × 107 cd/m2 and a peak external quantum efficiency of 1.75% measured in a wafer form (i.e., without any packaging to enhance an extraction efficiency). In contrast, an LED grown under identical growth conditions but on a standard planar surface shows green emission at 538 nm. This highlights that our approach provides a simple solution that can address the two major challenges mentioned above