PbTe nanocrystals were deposited onto the surface of graphene and used as a reservoir of Pb and Te atoms. Electron beam irradiation at 80 kV caused Pb and Te atoms to mobilize and disperse across the surface of graphene. We studied the dynamics of these atoms in real time using aberration-corrected transmission electron microscopy. The Pb and Te atoms were found to attach to the surface layer of amorphous carbon that resides upon the graphene, as well as its edge. Pb and Te atoms were not found residing on pristine graphene, but were found to bond to the free edge states along graphene hole edges. Small PbTe nanoclusters tended to only form on the surface of the amorphous carbon regions and not on pristine graphene
We study the nucleation and growth of epitaxial graphene on Pt(111) surfaces at the atomic level usi...
We present a method to produce graphene and few layer graphene sheets using solution phase chemistry...
The effective utilization of graphene in optoelectronic devices requires blending with other semicon...
PbTe nanocrystals were deposited onto the surface of graphene and used as a reservoir of Pb and Te a...
In single-atom catalysis, the atomic structure and local electronic states of single atoms on a supp...
In situ low-voltage transmission electron microscopy (TEM) was performed to study the evolution of s...
The effective utilization of graphene in optoelectronic devices requires blending with other semicon...
[[abstract]]In single-atom catalysis, the atomic structure and local electronic states of single ato...
Focused electron beam irradiation has been used to create mono and divacancies in graphene within a ...
Low-voltage aberration-corrected transmission electron microscopy (TEM) is applied to investigate th...
Focused electron beam irradiation has been used to create mono and divacancies in graphene within a ...
ABSTRACT: In this Perspective, we present an overview of how different metals interface with suspend...
We present a method to produce graphene and few layer graphene sheets using solution phase chemistry...
Electron beam irradiation at 60 kV is used to open holes in graphene and expose fresh clean edges fo...
Surface atoms were observed during Pt nanocrystal growth by attachments of monomers using in situ gr...
We study the nucleation and growth of epitaxial graphene on Pt(111) surfaces at the atomic level usi...
We present a method to produce graphene and few layer graphene sheets using solution phase chemistry...
The effective utilization of graphene in optoelectronic devices requires blending with other semicon...
PbTe nanocrystals were deposited onto the surface of graphene and used as a reservoir of Pb and Te a...
In single-atom catalysis, the atomic structure and local electronic states of single atoms on a supp...
In situ low-voltage transmission electron microscopy (TEM) was performed to study the evolution of s...
The effective utilization of graphene in optoelectronic devices requires blending with other semicon...
[[abstract]]In single-atom catalysis, the atomic structure and local electronic states of single ato...
Focused electron beam irradiation has been used to create mono and divacancies in graphene within a ...
Low-voltage aberration-corrected transmission electron microscopy (TEM) is applied to investigate th...
Focused electron beam irradiation has been used to create mono and divacancies in graphene within a ...
ABSTRACT: In this Perspective, we present an overview of how different metals interface with suspend...
We present a method to produce graphene and few layer graphene sheets using solution phase chemistry...
Electron beam irradiation at 60 kV is used to open holes in graphene and expose fresh clean edges fo...
Surface atoms were observed during Pt nanocrystal growth by attachments of monomers using in situ gr...
We study the nucleation and growth of epitaxial graphene on Pt(111) surfaces at the atomic level usi...
We present a method to produce graphene and few layer graphene sheets using solution phase chemistry...
The effective utilization of graphene in optoelectronic devices requires blending with other semicon...