Voltage control of magnetism in ferromagnetic structures (Conference Paper)

San Diego, California, United StatesInternational audienceUntil now, spintronics devices have relied on polarized currents, which still generate relatively high dissipation, particularly for nanodevices based on DW motion. A novel solution to further reduce power consumption is emerging, based on electric field (E) gating to control the magnetic state. Here, we will describe the state of the art and our recent experiments on voltage induced changes in the magnetic properties of ferromagnetic metals. A thorough description of the advances in terms of control of intrinsic properties such as magnetic anisotropy and ferromagnetic transition temperature as well as in intrinsic properties like coercive field and domain wall motion will be presented. Additionally, a section will be dedicated to the summary of the key aspects concerning the fabrication and performance of magneto-electric field-effect devices