International audienceLifetime extension based on device level parameters dr ift is difficult to handle, an accurate BD model is thus mandatory for predictive simulation at circuit leve l. For the first time, a dedicated digital circuit has been designed to track multiple BD events. This circu it (called Flipper) has been used to enhance BD of custom cells. Measurements of BD time, delay and Id dq are compared with BD results obtained at device level to simulation
Graduation date: 2014Energy consumption is one of the primary bottlenecks to both large and small sc...
In nanoscale digital CMOS IC design, the large technology parameter variations have boosted the inte...
Product development based on highly integrated semiconductor circuits faces various challenges. To e...
International audienceLifetime extension based on device level parameters dr ift is difficult to han...
International audienceFor advanced CMOS nodes, high performance is reached with the down scaling of ...
Breakdown (BD) progressivity for oxides thicker than 20nm may allow circuit lifetime extension; for ...
Simulations of an inverter and a 32-bit SRAM bit slice are performed based on an atomistic approach....
Breakdown (BD) progressivity for oxides thicker than 20nm may allow circuit lifetime extension; for ...
Technology scaling along with the process developments has resulted in performance improvement of th...
International audienceAging induced degradation mechanisms occurring in digital circuits are of a gr...
International audienceThis work proposes a new bottom-up approach for on-line estimation of circuit ...
International audienceThis work proposes a new bottom-up approach for on-line estimation of circuit ...
International audienceThis work proposes a new bottom-up approach for on-line estimation of circuit ...
Defects, both as-fabricated and generated during operation, are an inevitable reality of real-world ...
Scaling down the dimensions of Metal Oxide Semiconductors (MOS) to nano-scale has resulted\ud in deg...
Graduation date: 2014Energy consumption is one of the primary bottlenecks to both large and small sc...
In nanoscale digital CMOS IC design, the large technology parameter variations have boosted the inte...
Product development based on highly integrated semiconductor circuits faces various challenges. To e...
International audienceLifetime extension based on device level parameters dr ift is difficult to han...
International audienceFor advanced CMOS nodes, high performance is reached with the down scaling of ...
Breakdown (BD) progressivity for oxides thicker than 20nm may allow circuit lifetime extension; for ...
Simulations of an inverter and a 32-bit SRAM bit slice are performed based on an atomistic approach....
Breakdown (BD) progressivity for oxides thicker than 20nm may allow circuit lifetime extension; for ...
Technology scaling along with the process developments has resulted in performance improvement of th...
International audienceAging induced degradation mechanisms occurring in digital circuits are of a gr...
International audienceThis work proposes a new bottom-up approach for on-line estimation of circuit ...
International audienceThis work proposes a new bottom-up approach for on-line estimation of circuit ...
International audienceThis work proposes a new bottom-up approach for on-line estimation of circuit ...
Defects, both as-fabricated and generated during operation, are an inevitable reality of real-world ...
Scaling down the dimensions of Metal Oxide Semiconductors (MOS) to nano-scale has resulted\ud in deg...
Graduation date: 2014Energy consumption is one of the primary bottlenecks to both large and small sc...
In nanoscale digital CMOS IC design, the large technology parameter variations have boosted the inte...
Product development based on highly integrated semiconductor circuits faces various challenges. To e...