textThe physics of electron devices is investigated within the framework of Semiclassical Monte Carlo and Path-Sum Monte Carlo analysis. Analyses of shortchannel III-V trigate nanowire and planar graphene FETs using a Semiclassical Monte Carlo algorithm are provided. In the case of the nanowire FETs, the bandstructure and scattering effects of a survey of materials on the drain current and carrier concentration are investigated in comparison with Si FETs of the same geometry. It is shown that for short channels, the drain current is predominantly determined by associated change in carrier velocity, as opposed to changes in the carrier concentration within the channel. For the graphene FETs, we demonstrate the effects of Zener tunnel...
The invention and refinement of sophisticated fabrication techniques such as the Molecular Beam Epit...
In this paper we investigate the transport properties of silicon nanowire FETs by using two differen...
The inclusion of quantum effects in the transport direction plays an important role in the extensive...
textThe physics of electron devices is investigated within the framework of Semiclassical Monte Car...
We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor...
There is a growing consensus in the electron device community that the 32nm node could be the last t...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
In this paper, we employ a newly-developed one-dimensional multi-subband Monte Carlo (1DMSMC) simula...
Continual technology innovations make it possible to fabricate electronic devices on the order of 10...
In this work we study electron transport modeling of a semiconducting quantum dot interacting with m...
Numerical simulations have been performed to study the single-charge-induced ON current fluctuations...
This book gives an overview of the quantum transport approaches for nanodevices and focuses on the W...
In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-c...
Single-electron transistor (SET) can offer lower power consumption and faster operating speed in the...
In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-c...
The invention and refinement of sophisticated fabrication techniques such as the Molecular Beam Epit...
In this paper we investigate the transport properties of silicon nanowire FETs by using two differen...
The inclusion of quantum effects in the transport direction plays an important role in the extensive...
textThe physics of electron devices is investigated within the framework of Semiclassical Monte Car...
We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor...
There is a growing consensus in the electron device community that the 32nm node could be the last t...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
In this paper, we employ a newly-developed one-dimensional multi-subband Monte Carlo (1DMSMC) simula...
Continual technology innovations make it possible to fabricate electronic devices on the order of 10...
In this work we study electron transport modeling of a semiconducting quantum dot interacting with m...
Numerical simulations have been performed to study the single-charge-induced ON current fluctuations...
This book gives an overview of the quantum transport approaches for nanodevices and focuses on the W...
In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-c...
Single-electron transistor (SET) can offer lower power consumption and faster operating speed in the...
In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-c...
The invention and refinement of sophisticated fabrication techniques such as the Molecular Beam Epit...
In this paper we investigate the transport properties of silicon nanowire FETs by using two differen...
The inclusion of quantum effects in the transport direction plays an important role in the extensive...