The invention provides a method of manufacturing an electronic device including a vertical thin film transistor. A layer (8) of semiconductor material is provided over an insulated gate electrode (2). A negative resist (14) is used to define source and drain electrodes (26,28) which extend over the insulating layer (8) up to the step formed therein adjacent an edge (16A) of the gate electrode (2)
A thin film transistor (TFT) comprises a n+ source region and a p+ drain separated by an undoped off...
A novel route for the low-cost patterning of electrical thin films has been established. The process...
Droplet ejection is a kind of technology commonly used and rapidly developed in printing, which depo...
The invention provides a method of manufacturing an electronic device including a vertical thin film...
Short channel thin film transistors suffer from unacceptably high leakage currents. The invention pr...
A silicon nitride thin film formation apparatus is provided for stationary and moving substrates and...
An electronic device (70) comprises a thin film transistor (TFT) (9,59), the TFT including a channel...
Because thin material films can possess a uniquecombination of properties their use in commercial as...
The present invention provides a novel thin film transistor device having the advantages of both con...
A thin film transistor comprises a first electrode, a second electrode, a control electrode, an insu...
The channel lengths of the top contact organic thin film transistors are usually defined during thei...
A method for the manufacture of at least part of a thin-film device is described wherein, said metho...
The channel lengths of the top contact organic thin film transistors are usually defined during thei...
In this paper bottom gate bottom contact organic thin film transistors utilizing R2R-processes for g...
A thin film transistor array fabricated on a polyimide substrate forms a backplane for an electronic...
A thin film transistor (TFT) comprises a n+ source region and a p+ drain separated by an undoped off...
A novel route for the low-cost patterning of electrical thin films has been established. The process...
Droplet ejection is a kind of technology commonly used and rapidly developed in printing, which depo...
The invention provides a method of manufacturing an electronic device including a vertical thin film...
Short channel thin film transistors suffer from unacceptably high leakage currents. The invention pr...
A silicon nitride thin film formation apparatus is provided for stationary and moving substrates and...
An electronic device (70) comprises a thin film transistor (TFT) (9,59), the TFT including a channel...
Because thin material films can possess a uniquecombination of properties their use in commercial as...
The present invention provides a novel thin film transistor device having the advantages of both con...
A thin film transistor comprises a first electrode, a second electrode, a control electrode, an insu...
The channel lengths of the top contact organic thin film transistors are usually defined during thei...
A method for the manufacture of at least part of a thin-film device is described wherein, said metho...
The channel lengths of the top contact organic thin film transistors are usually defined during thei...
In this paper bottom gate bottom contact organic thin film transistors utilizing R2R-processes for g...
A thin film transistor array fabricated on a polyimide substrate forms a backplane for an electronic...
A thin film transistor (TFT) comprises a n+ source region and a p+ drain separated by an undoped off...
A novel route for the low-cost patterning of electrical thin films has been established. The process...
Droplet ejection is a kind of technology commonly used and rapidly developed in printing, which depo...