A superconductor–normal metal (SN) junction is fabricated on the surface of a few-layer MoS2 flake. Superconductivity is induced by ionic liquid gating, and an h-BN flake is used to locally separate ionic liquid from the surface of MoS2. The h-BN covered channel remains semiconducting, therefore an SN junction forms at the interface between the exposed and h-BN covered MoS2 channel. Transport properties at the SN junction are studied at low temperatures and under magnetic fields. The probability of observing Andreev reflection is discussed based on the BTK model
We report modifications of the temperature-dependent transport properties of MoS2 thin flakes via fi...
Transition metal dichalcogenides (TMDs) group are the most promising candidate to replace the presen...
This is the author accepted manuscript. The final version is available from the publisher via the DO...
A superconductor–normal metal (SN) junction is fabricated on the surface of a few-layer MoS2 flake. ...
An enhancement of the zero-voltage conductance of a niobium-silicon junction is found at very low te...
By dual gating a few-layer MoS2 flake, we induce spatially separated electronic states showing super...
We demonstrate superconducting vertical interconnect access (VIA) contacts to a mono-layer of molybd...
Layers of transition metal dichalcogenides (TMDs) combine the enhanced effects of correlations assoc...
The strong spin-orbit coupling along with broken inversion symmetry in transition metal dichalcogeni...
he newly emerging class of atomically-thin materials has shown a high potential for the realisation ...
We report modifications of the temperature-dependent transport properties of MoS2 thin flakes via fi...
Transition metal dichalcogenides (TMDs) group are the most promising candidate to replace the presen...
This is the author accepted manuscript. The final version is available from the publisher via the DO...
A superconductor–normal metal (SN) junction is fabricated on the surface of a few-layer MoS2 flake. ...
An enhancement of the zero-voltage conductance of a niobium-silicon junction is found at very low te...
By dual gating a few-layer MoS2 flake, we induce spatially separated electronic states showing super...
We demonstrate superconducting vertical interconnect access (VIA) contacts to a mono-layer of molybd...
Layers of transition metal dichalcogenides (TMDs) combine the enhanced effects of correlations assoc...
The strong spin-orbit coupling along with broken inversion symmetry in transition metal dichalcogeni...
he newly emerging class of atomically-thin materials has shown a high potential for the realisation ...
We report modifications of the temperature-dependent transport properties of MoS2 thin flakes via fi...
Transition metal dichalcogenides (TMDs) group are the most promising candidate to replace the presen...
This is the author accepted manuscript. The final version is available from the publisher via the DO...