X-ray Absorption Analysis of Structural Disorder in Amorphous Silicon
- Cicco, A. Di
- Bianconi, A.
- Coluzza, C.
- Rudolf, P.
- Lagarde, P.
- Flank, A.M.
- Marcelli, A.
DOIAbstract
Different levels of order of amorphous silicon (a-Si) samples have been measured by XANES (X-ray Absorption Near Edge Structure) and EXAFS (Extended X-ray Absorption Fine structure) analysis. The EXAFS analysis has been carried out by using a first-shell fitting procedure while in the XANES part we have extracted the high-frequency residuals which change with the level of order. From this analysis a continuous increase of local ordering has been found as a function of the substrate deposition temperature of the a-Si films
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