Add to ORKGThe inelastic lifetime tau(in) in 3-dimensional Si:P layers with doping far above the metal-insulator transition is determined from the weak localization correction to the magnetoresistance in the temperature range of 1.2-4.8 K. Electron-electron interaction effects show up weakly at high magnetic fields and low temperatures. The inelastic scattering rate is determined as tau(in)-1=1.1x10(9)xT2.2. The relative contribution of electron-electron and electron-phonon scattering is discussed.</p
The magnetoresistance due to electron-spin scattering in antiferromagnetic metals is obtained in the...
Complex studies of weak electron localization, electron-electron interaction, and electron overheati...
We report on a systematic investigation of the paramagnetic susceptibility $\chi_{\rm loc}(T)$ of l...
The inelastic lifetime tau(in) in 3-dimensional Si:P layers with doping far above the metal-insulato...
We find low-temperature positive magnetoresistance independent of sample orientation in bulk, metall...
A contribution to the magnetoresistance is observed at temperatures below 100 mK in bulk metallic Si...
The thermoelectric power S(T) of metallic compensated Si:(P,B) samples with carrier concentration N ...
This dissertation focuses on the experimental study of the anomalous "metallic" behavior of the cond...
High-resolution measurements of the electrical conductivity $\sigma (T)$ below $T= 1\,{\rm K}$ of un...
Temperature (1.6 - 20 K) and magnetic field (up to 2.5 T) dependences of quantum corrections to the ...
In a sandwich consisting of a thin Au film and a thin Bi film insulated by a 500 Å SiO layer the ele...
Abstract We report NMR measurements of transverse relaxation rate 1/T2 of the 31P nu-clear spins in ...
In silicon-on-insulator metal oxide semiconductor structures with a peak mobility of 25,000 cm2 / V ...
Heavily phosphorus-doped silicon nanowires (Si NWS) show intriguing transport phenomena at low tempe...
Measurements of the electron-spin-resonance properties of Si:P with dopant concentration of n=2.05×1...
The magnetoresistance due to electron-spin scattering in antiferromagnetic metals is obtained in the...
Complex studies of weak electron localization, electron-electron interaction, and electron overheati...
We report on a systematic investigation of the paramagnetic susceptibility $\chi_{\rm loc}(T)$ of l...
The inelastic lifetime tau(in) in 3-dimensional Si:P layers with doping far above the metal-insulato...
We find low-temperature positive magnetoresistance independent of sample orientation in bulk, metall...
A contribution to the magnetoresistance is observed at temperatures below 100 mK in bulk metallic Si...
The thermoelectric power S(T) of metallic compensated Si:(P,B) samples with carrier concentration N ...
This dissertation focuses on the experimental study of the anomalous "metallic" behavior of the cond...
High-resolution measurements of the electrical conductivity $\sigma (T)$ below $T= 1\,{\rm K}$ of un...
Temperature (1.6 - 20 K) and magnetic field (up to 2.5 T) dependences of quantum corrections to the ...
In a sandwich consisting of a thin Au film and a thin Bi film insulated by a 500 Å SiO layer the ele...
Abstract We report NMR measurements of transverse relaxation rate 1/T2 of the 31P nu-clear spins in ...
In silicon-on-insulator metal oxide semiconductor structures with a peak mobility of 25,000 cm2 / V ...
Heavily phosphorus-doped silicon nanowires (Si NWS) show intriguing transport phenomena at low tempe...
Measurements of the electron-spin-resonance properties of Si:P with dopant concentration of n=2.05×1...
The magnetoresistance due to electron-spin scattering in antiferromagnetic metals is obtained in the...
Complex studies of weak electron localization, electron-electron interaction, and electron overheati...
We report on a systematic investigation of the paramagnetic susceptibility $\chi_{\rm loc}(T)$ of l...