We describe two process steps in an STM-based fabrication technology for nanoelectronic devices. First, we have fabricated Co/Si metal lines on Si(100) surfaces by UHV-STM based nanolithography on a monohydride passivation layer. The STM tip was used to define depassivated lines (</p
Nanometer scale metals are of great interest due to their potential applications in the future of mo...
We present the development of a novel, UHV-compatible device fabrication strategy for the realisatio...
We present a complete fabrication process for the creation of robust nano-and atomic-scale devices i...
We describe two process steps in an STM-based fabrication technology for nanoelectronic devices. Fir...
We describe two process steps in an STM-based fabrication technology for nanoelectronic devices. Fir...
We describe two process steps in an STM-based fabrication technology for nanoelectronic devices. Fir...
We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...
We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...
We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...
We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...
We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...
We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...
Fabricating and measuring sub-5 nanometer features brings to light several pressing issues in future...
135 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.The importance of molecular n...
135 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.The importance of molecular n...
Nanometer scale metals are of great interest due to their potential applications in the future of mo...
We present the development of a novel, UHV-compatible device fabrication strategy for the realisatio...
We present a complete fabrication process for the creation of robust nano-and atomic-scale devices i...
We describe two process steps in an STM-based fabrication technology for nanoelectronic devices. Fir...
We describe two process steps in an STM-based fabrication technology for nanoelectronic devices. Fir...
We describe two process steps in an STM-based fabrication technology for nanoelectronic devices. Fir...
We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...
We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...
We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...
We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...
We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...
We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...
Fabricating and measuring sub-5 nanometer features brings to light several pressing issues in future...
135 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.The importance of molecular n...
135 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.The importance of molecular n...
Nanometer scale metals are of great interest due to their potential applications in the future of mo...
We present the development of a novel, UHV-compatible device fabrication strategy for the realisatio...
We present a complete fabrication process for the creation of robust nano-and atomic-scale devices i...