Transition metal dichalcogenides (TMDs) combine interesting optical and spintronic properties in an atomically-thin material, where the light polarization can be used to control the spin and valley degrees-of-freedom for the development of novel opto-spintronic devices. These promising properties emerge due to their large spin-orbit coupling in combination with their crystal symmetries. Here, we provide simple symmetry arguments in a group-theory approach to unveil the symmetry-allowed spin scattering mechanisms, and indicate how one can use these concepts towards an external control of the spin lifetime. We perform this analysis for both monolayer (inversion asymmetric) and bilayer (inversion symmetric) crystals, indicating the different m...
When graphene is placed on a monolayer of semiconducting transition metal dichalcogenide (TMD) its b...
Van der Waals heterostructures have become a paradigm for designing new materials and devices in whi...
Atomically thin materials such as graphene and monolayer transition metal dichalcogenides (TMDs) exh...
Transition metal dichalcogenides (TMDs) combine interesting optical and spintronic properties in an ...
In this dissertation, I will summarize two very different experiments involving layered transition m...
Atomically thin layers of group VI transition metal dichalcogenides (TMDCs) have been recognized as ...
We report the spin-selective optical excitation of carriers in inversion-symmetric bulk samples of t...
In monolayer group-VI transition metal dichalcogenides, charge carriers have spin and valley degrees...
Transition Metal Dichalcogenides (TMDs) are a family of layered materials with potential application...
Transition-metal dichalcogenides are unique semiconductors because of their exclusive coupling betwe...
Inversion-symmetric materials are forbidden to show an overall spin texture in their band structure ...
The valley degree of freedom of electrons is attracting growing interest as a carrier of information...
We report the spin-selective optical excitation of carriers in inversion-symmetric bulk samples of t...
When graphene is placed on a monolayer of semiconducting transition metal dichalcogenide (TMD) its b...
Van der Waals heterostructures have become a paradigm for designing new materials and devices in whi...
Atomically thin materials such as graphene and monolayer transition metal dichalcogenides (TMDs) exh...
Transition metal dichalcogenides (TMDs) combine interesting optical and spintronic properties in an ...
In this dissertation, I will summarize two very different experiments involving layered transition m...
Atomically thin layers of group VI transition metal dichalcogenides (TMDCs) have been recognized as ...
We report the spin-selective optical excitation of carriers in inversion-symmetric bulk samples of t...
In monolayer group-VI transition metal dichalcogenides, charge carriers have spin and valley degrees...
Transition Metal Dichalcogenides (TMDs) are a family of layered materials with potential application...
Transition-metal dichalcogenides are unique semiconductors because of their exclusive coupling betwe...
Inversion-symmetric materials are forbidden to show an overall spin texture in their band structure ...
The valley degree of freedom of electrons is attracting growing interest as a carrier of information...
We report the spin-selective optical excitation of carriers in inversion-symmetric bulk samples of t...
When graphene is placed on a monolayer of semiconducting transition metal dichalcogenide (TMD) its b...
Van der Waals heterostructures have become a paradigm for designing new materials and devices in whi...
Atomically thin materials such as graphene and monolayer transition metal dichalcogenides (TMDs) exh...