Solution Processed Self-Assembled Monolayer Gate Dielectrics for Low-Voltage Organic Transistors

Low-voltage org. transistors are sought for implementation in high vol. low-power portable electronics of the future. Here we assess the suitability of three phosphonic acid based self-assembling mols. for use as ultra-thin gate dielecs. in low-voltage soln. processable org. field-effect transistors. In particular, monolayers of phosphonohexadecanoic acid in metal-monolayer-metal type sandwich devices are shown to exhibit low leakage currents and high geometrical capacitance comparable to previously demonstrated self-assembled monolayer (SAM) type dielecs. [1, 2] but with a higher surface energy. The improved surface energy characteristics enable processing of a wider range of org. semiconductors from soln. Transistors based on a no. of soln.-processed org. semiconductors with operating voltages below 2 V are also demonstrated. [on SciFinder(R)