Mössbauer spectra obtained with absorbers of Te12581Ge15As4 and a ZnTe125m source indicate that tellurium atoms are in an environment similar to that in tellurium metal. These spectra as well as those obtained with sources of Te129m81Ge15As4 and a CuI129 absorber indicate that the amorphous phase has a higher charge asymmetry than the crystalline phase which is consistent with the concept of ``dangling'' chemical bonds. Because of the great difference in the I129 spectra of the amorphous and crystalline phases it appears of interest to investigate Ovonic devices prepared with Te129m in order to see if voltage‐dependent phenomena can be observed in the I129 Mössbauer spectra
International audienceUnderstanding the physical origin of threshold switching and resistance drift ...
International audienceUnderstanding the physical origin of threshold switching and resistance drift ...
The underlying mechanism driving the structural amorphous-to-crystalline transition in Group VI chal...
Mössbauer spectra obtained with absorbers of Te12581Ge15As4 and a ZnTe125m source indicate that tell...
Mössbauer spectra obtained with absorbers of Te12581Ge15As4 and a ZnTe125m source indicate that tell...
Mössbauer spectra obtained with absorbers of Te12581Ge15As4 and a ZnTe125m source indicate that tell...
Mössbauer spectra obtained with absorbers of Te12581Ge15As4 and a ZnTe125m source indicate that tell...
Recoilless resonant absorption of the 35.6-KeV γ ray (3/2+ to ½+ transition) in Te125 has been obser...
International audienceDespite being close neighbors on the Periodic Table, selenium and tellurium pr...
High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant...
peer reviewedAbstract The sub-picosecond response of amorphous germanium telluride thin film to a fe...
High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant...
High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant...
Today, telluride-based phase change materials (PCM) are well-suited for data storage applications ow...
The ability to tune the properties over a wide range of values by changing the additives, compositio...
International audienceUnderstanding the physical origin of threshold switching and resistance drift ...
International audienceUnderstanding the physical origin of threshold switching and resistance drift ...
The underlying mechanism driving the structural amorphous-to-crystalline transition in Group VI chal...
Mössbauer spectra obtained with absorbers of Te12581Ge15As4 and a ZnTe125m source indicate that tell...
Mössbauer spectra obtained with absorbers of Te12581Ge15As4 and a ZnTe125m source indicate that tell...
Mössbauer spectra obtained with absorbers of Te12581Ge15As4 and a ZnTe125m source indicate that tell...
Mössbauer spectra obtained with absorbers of Te12581Ge15As4 and a ZnTe125m source indicate that tell...
Recoilless resonant absorption of the 35.6-KeV γ ray (3/2+ to ½+ transition) in Te125 has been obser...
International audienceDespite being close neighbors on the Periodic Table, selenium and tellurium pr...
High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant...
peer reviewedAbstract The sub-picosecond response of amorphous germanium telluride thin film to a fe...
High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant...
High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant...
Today, telluride-based phase change materials (PCM) are well-suited for data storage applications ow...
The ability to tune the properties over a wide range of values by changing the additives, compositio...
International audienceUnderstanding the physical origin of threshold switching and resistance drift ...
International audienceUnderstanding the physical origin of threshold switching and resistance drift ...
The underlying mechanism driving the structural amorphous-to-crystalline transition in Group VI chal...