Charge transport in disordered organic field-effect transistors

The transport properties of poly(2,5-thienylene vinylene) (PTV) field-effect transistors (FET) have been investigated as a function of temperature under controlled atmosphere. In a disordered semiconductor as PTV the charge carrier mobility, dominated by hopping between localized states, is dependent on the charge carrier density. The transfer characteristics of PTV FET have been modeled considering the distribution of charge carriers and mobility over the accumulation channel. Good agreement with the experimental data is obtained.