Low-temperature scanning tunneling spectroscopy is used to study the Ag(111) surface state over an unprecedented range of junction resistances. The presence of the tip causes a shift of the surface state towards higher binding energies, increasingly stronger as the resistance decreases. A one-dimensional model calculation reproduces this observation and provides a connection to existing photoemission spectroscopy data. Implications of the effect on STS studies are discussed
Low-temperature scanning tunneling spectroscopy measurements on semiconductor surface are described....
The Ag/Ge(111) surface together with Ag/Si(111) constitutes a set of surfaces that is ideally suit...
Recent experimental work has reached an accurate determination of surface-state linewidth by scannin...
Quasiparticle interactions broaden spectral features at surfaces, which can be measured using the sc...
A regular step, a dislocation slip step and a step formed by the emergence of a split edge dislocati...
The properties of two-dimensional (2D) electronic states located at the surface of the (111) faces o...
Scanning tunneling microscopy (STM) and normal-incidence X-ray standing wave (NIXSW) analysis, toget...
We investigate the electronic states of thin Ag films grown on GaAs(110) surfaces at low temperature...
We show that the density of surface Shockley states of Ag(111) probed by the differential conductanc...
The surface band gap of the Ge(111)c(2×8) surface at low temperature is determined on the basis of s...
Several recent developments in scanning tunneling spectroscopy (STS) of semiconductor surfaces are r...
International audienceWe proposed a method based on scanning tunneling spectroscopy of the Shockley ...
The clean and reacted surfaces of Si(111)-(7x7), Si(100)-(2x1), Ge(111)-c(2x8), and Ge(100)-(2x1) ha...
Scanning tunneling spectroscopy is used to study p-type Ge(111)c(2×8) surfaces at temperatures betwe...
A number of different metal layer structures have been examined using angle-resolved photoemission a...
Low-temperature scanning tunneling spectroscopy measurements on semiconductor surface are described....
The Ag/Ge(111) surface together with Ag/Si(111) constitutes a set of surfaces that is ideally suit...
Recent experimental work has reached an accurate determination of surface-state linewidth by scannin...
Quasiparticle interactions broaden spectral features at surfaces, which can be measured using the sc...
A regular step, a dislocation slip step and a step formed by the emergence of a split edge dislocati...
The properties of two-dimensional (2D) electronic states located at the surface of the (111) faces o...
Scanning tunneling microscopy (STM) and normal-incidence X-ray standing wave (NIXSW) analysis, toget...
We investigate the electronic states of thin Ag films grown on GaAs(110) surfaces at low temperature...
We show that the density of surface Shockley states of Ag(111) probed by the differential conductanc...
The surface band gap of the Ge(111)c(2×8) surface at low temperature is determined on the basis of s...
Several recent developments in scanning tunneling spectroscopy (STS) of semiconductor surfaces are r...
International audienceWe proposed a method based on scanning tunneling spectroscopy of the Shockley ...
The clean and reacted surfaces of Si(111)-(7x7), Si(100)-(2x1), Ge(111)-c(2x8), and Ge(100)-(2x1) ha...
Scanning tunneling spectroscopy is used to study p-type Ge(111)c(2×8) surfaces at temperatures betwe...
A number of different metal layer structures have been examined using angle-resolved photoemission a...
Low-temperature scanning tunneling spectroscopy measurements on semiconductor surface are described....
The Ag/Ge(111) surface together with Ag/Si(111) constitutes a set of surfaces that is ideally suit...
Recent experimental work has reached an accurate determination of surface-state linewidth by scannin...