Anomalous Behavior of the Hall Effect in III-V Heterostructures
- Dziuba, Z.
- Górska, M.
- Marczewski, J.
- Przesławski, T.
- Regiński, K.
Publication date
February 2000
DOI Publisher
Institute of Physics, Polish Academy of SciencesAbstract
The Hall effect and magnetoresistance were measured in the InAs/GaAs heterostructure at temperatures from 300 K down to 3 K, in a magnetic field range from 0.01 to 1.5 T. The anomalous magnetic field dependence of the Hall coefficient in the InAs/GaAs heterostructure in magnetic fields below 0.1 T was explained as due to an extraordinary Hall effect caused by skew scattering on dislocations
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